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| Datasheet File OCR Text: |
| TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 6 3 1.25 150 -55-150 Units V V V A W ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE (sat) VBE (sat) fT Test conditions MIN 40 30 5 1 10 1 60 400 0.5 1.5 90 V V MHz TYP MAX UNIT V V V A A A IC = 100A, IE=0 IC = 10mA, IB=0 IE= 100A, IC=0 VCB= 40 V, IE=0 VCE= 30 V, IB=0 VEB= 6 V, IC=0 VCE= 2 V, IC= 1A IC= 2A, IB= 0.2 A IC= 2A, IB= 0.2 A VCE= 5V, IC=0.1A f =10MHz CLASSIFICATION OF hFE Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 |
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